BIMSA > Ying Li
Postdoc Ying Li

Group: Artificial Intelligence and Machine Learning

Office: A3-3-102

Email: liying@bimsa.cn

Research Field: Large Language Model; AI for Science; High-Performance Computing

Webpage: https://scholar.google.com/citations?hl=zh-CN&user=kXG6V8kAAAAJ&view_op=list_works&sortby=pubdate

CV

Biography

I obtained my Ph.D. and bachelor's degrees from Peking University and Nanjing University, respectively. I have extensive research experience in high-performance computing (HPC) and deep learning. I have published papers in prestigious journals and conferences such as EMNLP, Physical Review Letters, Advanced Functional Materials, and Physical Review Applied, with a total citation of 766 and an H-index of 15. My current research interests are primarily focused on large language models (LLMs) and LLM for math.

Education Experience

  • 2019 - 2024      Peking University      Computational Physics      Ph.D
  • 2016 - 2019      Peking University      Physics      Ph.D
  • 2012 - 2016      Nanjing University      Physics      Bachelor

Publication

  • [1] Y Chen, S Li, Y Li, M Atari, Surveying the dead minds: Historical-psychological text analysis with contextualized construct representation (CCR) for classical Chinese, EMNLP (2024)
  • [2] Y Li, L Xu, C Yang, L Xu, S Liu, Z Yang, Q Li, J Dong, J Yang, J Lu, Electrical Contacts in Monolayer MoSi2N4 Transistors, ACS Applied Materials & Interfaces, 16(37), 48687-50026 (2024)
  • [3] Y Li, C Qi, X Zhou, L Xu, Q Li, S Liu, C Yang, S Liu, X Lin, J Dong, S Fang et al., Monolayer WSi2N4 : A promising channel material for sub-5-nm-gate homogeneous CMOS devices, Physical Review Applied, 20(6) (2023)
  • [4] Y Li, Y Shen, L Xu, S Liu, Y Chen, Q Li, Z Yang, X Sun, H Tian, J Lu, Quantum Transport Simulation of Sub-1-nm Gate Length Monolayer MoS2 Transistors, https://arxiv.org/abs/2404.13801 (2024)
  • [5] Y Li, Z Yang, Q Li, J Dong, J Lu, Ballistic 2D MoS2 transistors with ultra-high on-state currents, Science China Materials, 67(10), 3083-3086 (2024)
  • [6] H Li*, Q Li*, Y Li*, Z Yang*, R Quhe, X Sun, Y Wang, L Xu, L Peng, H Tian et al., Recent Experimental Breakthroughs on 2D Transistors: Approaching the Theoretical Limit, Advanced Functional Materials, 34(38) (2024)
  • [7] Y Li, ZY Han, CJ Li, J Lü, X Yuan, BJ Wu, Review on Quantum Advantages of Sampling Problems, Acta Physica Sinica, 70(21) (2021)
  • [8] BC Lin, S Wang, AQ Wang, Y Li, RR Li, K Xia, D Yu, ZM Liao, Electric control of Fermi arc spin transport in individual topological semimetal nanowires, Physical Review Letters, 124(11) (2020)
  • [9] S Wang, B Lin, Y Li, D Yu, ZM Liao, Tunable anomalous Hall effect in Dirac semimetal Cd3As2 nanowire, Bulletin of the American Physical Society, 65 (2020)
  • [10] X Yang, S Fang, Y Li, Z Yang, Q Li, M Wang, J Lu, Ab-Initio Quantum Transport Simulation of Sub-1 nm Gate Length Monolayer and Bilayer WSe2 Transistors: Implications for Ultra-Scaled CMOS Technology, ACS Applied Nano Materials (2025)
  • [11] XY Wang, HZ Chen, Y Li, B Li, RM Ma, Microscale vortex laser with controlled topological charge, Chinese Physics B, 25(12) (2016)

 

Update Time: 2025-06-30 16:05:29