BIMSA > Ying Li
Postdoc Ying Li

Group: Artificial Intelligence and Machine Learning

Office: A3-3-102

Email: liying@bimsa.cn

Research Field: Large Language Model; AI for Science; High-Performance Computing

Webpage: https://scholar.google.com/citations?hl=zh-CN&user=kXG6V8kAAAAJ&view_op=list_works&sortby=pubdate

CV

Biography

I obtained my Ph.D. and bachelor's degrees from Peking University and Nanjing University, respectively. I have extensive research experience in high-performance computing (HPC) and deep learning. I have published papers in prestigious journals and conferences such as EMNLP, Physical Review Letters, Advanced Functional Materials, and Physical Review Applied, with a total citation of 966 and an H-index of 16. My current research interests focus on enhancing the reasoning capabilities of large language models (LLMs) and multimodal foundation models, with applications to mathematical reasoning and AI for Science.

Education Experience

  • 2019 - 2024      Peking University      Computational Physics      Ph.D
  • 2016 - 2019      Peking University      Physics      Ph.D
  • 2012 - 2016      Nanjing University      Physics      Bachelor

Publication

  • [1] Y Chen, S Li, Y Li, M Atari, Surveying the dead minds: Historical-psychological text analysis with contextualized construct representation (CCR) for classical Chinese, EMNLP (2024)
  • [2] Y Li, L Xu, C Yang, L Xu, S Liu, Z Yang, Q Li, J Dong, J Yang, J Lu, Electrical Contacts in Monolayer MoSi2N4 Transistors, ACS Applied Materials & Interfaces, 16(37), 48687-50026 (2024)
  • [3] Y Li, C Qi, X Zhou, L Xu, Q Li, S Liu, C Yang, S Liu, X Lin, J Dong, S Fang et al., Monolayer WSi2N4 : A promising channel material for sub-5-nm-gate homogeneous CMOS devices, Physical Review Applied, 20(6) (2023)
  • [4] Y Li, Y Shen, L Xu, S Liu, Y Chen, Q Li, Z Yang, X Sun, H Tian, J Lu, Quantum Transport Simulation of Sub-1-nm Gate Length Monolayer MoS2 Transistors, https://arxiv.org/abs/2404.13801 (2024)
  • [5] Y Li, Z Yang, Q Li, J Dong, J Lu, Ballistic 2D MoS2 transistors with ultra-high on-state currents, Science China Materials, 67(10), 3083-3086 (2024)
  • [6] H Li*, Q Li*, Y Li*, Z Yang*, R Quhe, X Sun, Y Wang, L Xu, L Peng, H Tian et al., Recent Experimental Breakthroughs on 2D Transistors: Approaching the Theoretical Limit, Advanced Functional Materials, 34(38) (2024)
  • [7] Y Li, ZY Han, CJ Li, J Lü, X Yuan, BJ Wu, Review on Quantum Advantages of Sampling Problems, Acta Physica Sinica, 70(21) (2021)
  • [8] BC Lin, S Wang, AQ Wang, Y Li, RR Li, K Xia, D Yu, ZM Liao, Electric control of Fermi arc spin transport in individual topological semimetal nanowires, Physical Review Letters, 124(11) (2020)
  • [9] S Wang, B Lin, Y Li, D Yu, ZM Liao, Tunable anomalous Hall effect in Dirac semimetal Cd3As2 nanowire, Bulletin of the American Physical Society, 65 (2020)
  • [10] X Yang, S Fang, Y Li, Z Yang, Q Li, M Wang, J Lu, Ab-Initio Quantum Transport Simulation of Sub-1 nm Gate Length Monolayer and Bilayer WSe2 Transistors: Implications for Ultra-Scaled CMOS Technology, ACS Applied Nano Materials (2025)
  • [11] XY Wang, HZ Chen, Y Li, B Li, RM Ma, Microscale vortex laser with controlled topological charge, Chinese Physics B, 25(12) (2016)

 

Update Time: 2026-01-30 13:00:10