BIMSA > 黎颖
博士后 黎颖

团队: 人工智能和机器学习

办公室: A3-3-102

邮箱: liying@bimsa.cn

研究方向: 大语言模型，人工智能，高性能计算

个人主页: https://scholar.google.com/citations?hl=zh-CN&user=kXG6V8kAAAAJ&view_op=list_works&sortby=pubdate

CV

个人简介

I obtained my Ph.D. and bachelor's degrees from Peking University and Nanjing University, respectively. I have extensive research experience in high-performance computing (HPC) and deep learning. I have published papers in prestigious journals and conferences such as EMNLP, Physical Review Letters, Advanced Functional Materials, and Physical Review Applied, with a total citation of 966 and an H-index of 16. My current research interests focus on enhancing the reasoning capabilities of large language models (LLMs) and multimodal foundation models, with applications to mathematical reasoning and AI for Science.

教育经历

  • 2019 - 2024      北京大学      计算物理学      Ph.D
  • 2016 - 2019      北京大学      物理学      Ph.D
  • 2012 - 2016      南京大学      物理学      Bachelor

出版物

  • [1] Y Chen, S Li, Y Li, M Atari, Surveying the dead minds: Historical-psychological text analysis with contextualized construct representation (CCR) for classical Chinese, EMNLP (2024)
  • [2] Y Li, L Xu, C Yang, L Xu, S Liu, Z Yang, Q Li, J Dong, J Yang, J Lu, Electrical Contacts in Monolayer MoSi2N4 Transistors, ACS Applied Materials & Interfaces, 16(37), 48687-50026 (2024)
  • [3] Y Li, C Qi, X Zhou, L Xu, Q Li, S Liu, C Yang, S Liu, X Lin, J Dong, S Fang et al., Monolayer WSi2N4 : A promising channel material for sub-5-nm-gate homogeneous CMOS devices, Physical Review Applied, 20(6) (2023)
  • [4] Y Li, Y Shen, L Xu, S Liu, Y Chen, Q Li, Z Yang, X Sun, H Tian, J Lu, Quantum Transport Simulation of Sub-1-nm Gate Length Monolayer MoS2 Transistors, https://arxiv.org/abs/2404.13801 (2024)
  • [5] Y Li, Z Yang, Q Li, J Dong, J Lu, Ballistic 2D MoS2 transistors with ultra-high on-state currents, Science China Materials, 67(10), 3083-3086 (2024)
  • [6] H Li*, Q Li*, Y Li*, Z Yang*, R Quhe, X Sun, Y Wang, L Xu, L Peng, H Tian et al., Recent Experimental Breakthroughs on 2D Transistors: Approaching the Theoretical Limit, Advanced Functional Materials, 34(38) (2024)
  • [7] Y Li, ZY Han, CJ Li, J Lü, X Yuan, BJ Wu, Review on Quantum Advantages of Sampling Problems, Acta Physica Sinica, 70(21) (2021)
  • [8] BC Lin, S Wang, AQ Wang, Y Li, RR Li, K Xia, D Yu, ZM Liao, Electric control of Fermi arc spin transport in individual topological semimetal nanowires, Physical Review Letters, 124(11) (2020)
  • [9] S Wang, B Lin, Y Li, D Yu, ZM Liao, Tunable anomalous Hall effect in Dirac semimetal Cd3As2 nanowire, Bulletin of the American Physical Society, 65 (2020)
  • [10] X Yang, S Fang, Y Li, Z Yang, Q Li, M Wang, J Lu, Ab-Initio Quantum Transport Simulation of Sub-1 nm Gate Length Monolayer and Bilayer WSe2 Transistors: Implications for Ultra-Scaled CMOS Technology, ACS Applied Nano Materials (2025)
  • [11] XY Wang, HZ Chen, Y Li, B Li, RM Ma, Microscale vortex laser with controlled topological charge, Chinese Physics B, 25(12) (2016)

 

更新时间: 2026-01-30 15:00:10